R&D And Innovation-

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R&D And Innovation

R&D and Innovation

Research team

GCL TECH's scientific research team gathers the world's top photovoltaic experts and scholars, forming a three-level technical talent echelon with Chinese and overseas experts as scientific and technological leaders, young scholars with solid overseas research backgrounds as backbone forces, and doctoral/master degree graduates from top universities as reserve forces.GCL TECH will continue to attract top talents globally, committed to building a world-class R&D team, values the introduction and training of all types of R&D personnel, and provides a broad growth and development platform for R&D personnel.

National and Local Joint Engineering Research Center

National Postdoctoral Research Station

Jiangsu Key Laboratory of Silicon-based Electronic Materials

GCL Testing Technology Center certified by CNAS

Other technical centers include:

Provincial Quartz Crucible Engineering Research Center Provincial Polysilicon Black Silicon Chip Engineering Technology Research Center Provincial Chlorohydride Technology Engineering Center Provincial Polysilicon Material Engineering Technology Research Center Provincial Square Silicon Core Engineering Technology Research Center

Technical achievements

GCL Technology places great emphasis on investment in intellectual property management, continuously enhancing research and development innovation. The company has filed over 1,300 patent applications, with more than 1,000 patents granted, covering various technological fields such as silane fluidized bed granular silicon, continuous Czochralski (CCz) single crystal pulling, and silicon wafer cutting processes. The authorization of several core invention patents provides strong support for GCL's protection of its proprietary intellectual property.

World-leading polysilicon manufacturing technology

GCL TECH has made breakthroughs in producing granular silicon using the fluidized bed method (FBR) on polysilicon production technology with independent intellectual property rights with a silane conversion rate close to 100%. Compared with the improved Siemens method, the FBR method has the advantages of low energy consumption and low cost. The granular silicon products produced do not need to be crushed and have good fluidity, which can better meet the RCz or CCz method of directly pulling the monocrystalline silicon process.

High-quality granular silicon, meeting the material needs of monocrystals

It can be produced continuously, the product does not need to be crushed, and no secondary pollution is introduced

A single reactor has an annual output of 5,000 tons and a world-class fluidized bed reaction system

Perovskite frontier technology

GCL Technology's subsidiary, Kunshan GCL Optoelectronic Materials Co., Ltd., is constructing the world’s first gigawatt-scale production base for large-format (1.2m × 2.4m) perovskite tandem modules. The efficiency of these perovskite modules has repeatedly set world records, with the current large-size tandem module efficiency reaching 26.36%@1.71m², setting a new benchmark.

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Electronic-Grade Polysilicon Business

Jiangsu Xinhua Semiconductor Technology Co., Ltd., jointly established by GCL Tech and the National Integrated Circuit Industry Investment Fund, has become China's largest semiconductor industry electronic-grade polysilicon production enterprise to date, breaking the foreign technology and market monopoly of large-scale integrated circuit electronic-grade polysilicon and filling the domestic industry gap.

CCz technology research and development
(continuous direct pulling monocrystal technology)

Good fluidity of granular silicon + High quality and efficiency of CCz = Upstream technologies perfectly matched to n-type batteries

CCz technology, a major change in photovoltaic monocrystalline silicon technology: CCz continuous direct pulling method uses a special direct pulling monocrystal furnace, the crystal rod pulling and the feeding melting are carried out at the same time, the crucible is a double-layer crucible, the granular silicon is added to the outer crucible through the feeder, the quartz baffle can effectively isolate the melt disturbance caused by the feeding, and prevent the pulling process of the inner crucible from being affected by the feeding process.

GCL's CCz has achieved phased success: GCL's single CCz crystal pulling furnace production capacity has reached up to 185 kg/day, with a pilot production capacity of 200 MW.With the promotion of N-type monocrystals and large-diameter monocrystals, the technical advantages of CCz will become more apparent.

Large-size silicon wafer-cutting technology

Upgrade equipment structure, optimize production line process to fully match the technical requirements of G12 large silicon wafer processing size, and achieve the full-process development of G12 silicon wafers from equipment to process.

Slicing processing area, implement adjustable design solutions for different sections, and match the slicing processing of silicon rods of different sizes.

GCL TECH has developed the exclusive "reverse cut" large-size slicing technology, overcoming the technical difficulties of high difficulty in steel wire cutting of large silicon wafers, poor precision of silicon wafers, and low yield of processing.

Through the development of key supporting auxiliary materials for large silicon wafers, the cutting efficiency is improved, and the cutting consumption is reduced.